JPH0326827B2 - - Google Patents

Info

Publication number
JPH0326827B2
JPH0326827B2 JP58093345A JP9334583A JPH0326827B2 JP H0326827 B2 JPH0326827 B2 JP H0326827B2 JP 58093345 A JP58093345 A JP 58093345A JP 9334583 A JP9334583 A JP 9334583A JP H0326827 B2 JPH0326827 B2 JP H0326827B2
Authority
JP
Japan
Prior art keywords
developer
resist
temperature
sensitivity
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58093345A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59219743A (ja
Inventor
Koichiro Hashimoto
Cho Yamamoto
Hisashi Nakane
Akira Yokota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP58093345A priority Critical patent/JPS59219743A/ja
Priority to US06/614,908 priority patent/US4610953A/en
Publication of JPS59219743A publication Critical patent/JPS59219743A/ja
Publication of JPH0326827B2 publication Critical patent/JPH0326827B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58093345A 1983-05-28 1983-05-28 ポジ型レジスト現像液 Granted JPS59219743A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58093345A JPS59219743A (ja) 1983-05-28 1983-05-28 ポジ型レジスト現像液
US06/614,908 US4610953A (en) 1983-05-28 1984-05-29 Aqueous developer solution for positive type photoresists with tetramethyl ammonium hydroxide and trimethyl hydroxyethyl ammonium hydroxide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58093345A JPS59219743A (ja) 1983-05-28 1983-05-28 ポジ型レジスト現像液

Publications (2)

Publication Number Publication Date
JPS59219743A JPS59219743A (ja) 1984-12-11
JPH0326827B2 true JPH0326827B2 (en]) 1991-04-12

Family

ID=14079675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58093345A Granted JPS59219743A (ja) 1983-05-28 1983-05-28 ポジ型レジスト現像液

Country Status (2)

Country Link
US (1) US4610953A (en])
JP (1) JPS59219743A (en])

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182444A (ja) * 1983-04-01 1984-10-17 Sumitomo Chem Co Ltd ポジ型フオトレジストの改良現像液
JPH063549B2 (ja) * 1984-12-25 1994-01-12 株式会社東芝 ポジ型フォトレジスト現像液組成物
JPH0727219B2 (ja) * 1985-04-26 1995-03-29 日立化成工業株式会社 ネガ型感光性組成物用現像液
JPS6232453A (ja) * 1985-08-06 1987-02-12 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト用現像液
US4784937A (en) * 1985-08-06 1988-11-15 Tokyo Ohka Kogyo Co., Ltd. Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant
DE3530282A1 (de) * 1985-08-24 1987-03-05 Hoechst Ag Verfahren zum entschichten von lichtgehaerteten photoresistschichten
US4827867A (en) * 1985-11-28 1989-05-09 Daikin Industries, Ltd. Resist developing apparatus
JPH0638159B2 (ja) * 1986-07-18 1994-05-18 東京応化工業株式会社 ポジ型ホトレジスト用現像液
JP2543348B2 (ja) * 1986-07-30 1996-10-16 住友化学工業株式会社 ポジ形レジスト用現像液
DE3629122A1 (de) * 1986-08-27 1988-03-10 Hoechst Ag Verfahren zur herstellung eines o-naphthochinondiazidsulfonsaeureesters und diesen enthaltendes lichtempfindliches gemisch
US5988186A (en) * 1991-01-25 1999-11-23 Ashland, Inc. Aqueous stripping and cleaning compositions
US5164286A (en) * 1991-02-01 1992-11-17 Ocg Microelectronic Materials, Inc. Photoresist developer containing fluorinated amphoteric surfactant
US5543268A (en) * 1992-05-14 1996-08-06 Tokyo Ohka Kogyo Co., Ltd. Developer solution for actinic ray-sensitive resist
JP3104939B2 (ja) * 1992-10-01 2000-10-30 東京応化工業株式会社 半導体デバイス製造用レジスト現像液組成物
US5476320A (en) * 1992-12-28 1995-12-19 Sumitomo Chemical Co., Ltd. Developer preparing apparatus and developer preparing method
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6194366B1 (en) 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6136514A (en) 2000-01-31 2000-10-24 Advanced Micro Devices, Inc. Resist developer saving system using material to reduce surface tension and wet resist surface
US6479820B1 (en) 2000-04-25 2002-11-12 Advanced Micro Devices, Inc. Electrostatic charge reduction of photoresist pattern on development track
JP5036219B2 (ja) * 2006-05-30 2012-09-26 株式会社日立製作所 有機薄膜トランジスタを有する半導体装置の製造方法
JP2008071974A (ja) * 2006-09-14 2008-03-27 Nec Electronics Corp パターン形成方法およびこれを用いた半導体装置の製造方法
JP2015028576A (ja) * 2013-07-01 2015-02-12 富士フイルム株式会社 パターン形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE793490A (fr) * 1972-05-23 1973-06-29 Hunt Chem Corp Philip A Article sensible a la lumiere comprenant un phenolate de diazoquinone, un liant polymerique, et une diazoquinone-siloxane
JPS5156226A (ja) * 1974-11-11 1976-05-17 Sanei Kagaku Kogyo Kk Hojitaipukankoseijushino genzozai
JPS5264877A (en) * 1975-11-26 1977-05-28 Toshiba Corp Production of semiconductor device
GB1573206A (en) * 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
JPS6057218B2 (ja) * 1976-10-21 1985-12-13 株式会社東芝 半導体装置の製造方法
US4141733A (en) * 1977-10-25 1979-02-27 Eastman Kodak Company Development of light-sensitive quinone diazide compositions
US4294911A (en) * 1979-06-18 1981-10-13 Eastman Kodak Company Development of light-sensitive quinone diazide compositions using sulfite stabilizer
JPS56122130A (en) * 1980-02-28 1981-09-25 Sharp Corp Method for forming pattern of thin film transistor
JPS57114141A (en) * 1981-01-06 1982-07-15 San Ei Chem Ind Ltd Increasing method for developing power of developer for positive type photosensitive resin
EP0062733B1 (en) * 1981-04-10 1986-01-02 Shipley Company Inc. Metal ion-free photoresist developer composition
US4423138A (en) * 1982-01-21 1983-12-27 Eastman Kodak Company Resist developer with ammonium or phosphonium compound and method of use to develop o-quinone diazide and novolac resist

Also Published As

Publication number Publication date
US4610953A (en) 1986-09-09
JPS59219743A (ja) 1984-12-11

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